HGTG20N60B3 N-Channel IGBT

ON Semiconductor

Description

UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best fea.

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Datasheet Specifications

Part number: HGTG20N60B3
Manufacturer: ON Semiconductor ↗
File Size: 420.81 KB
Datasheet: HGTG20N60B3-ONSemiconductor.pdf
Description: N-Channel IGBT

Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switch

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HGTG20N60B3 N-Channel IGBT ON Semiconductor

ON Semiconductor HGTG20N60B3-like datasheet