Datasheet Specifications
- Part number
- HGTG20N60A4D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 149.06 KB
- Datasheet
- HGTG20N60A4D_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
Data Sheet HGTG20N60A4D February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high volta.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used inApplications
* operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49341. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60A4D TO-247 20N60A4D NOTE: When ordering, use theHGTG20N60A4D Distributors
📁 Related Datasheet
📌 All Tags