HGTG20N120 N-Channel IGBT

Intersil Corporation

Description

Semiconductor HGTG20N120E2 34A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) April 1995 Fea.
The HGTG20N120E2 is a MOS gated, high voltage switching device combining the best features of MOSFETs and bipolar transistors.

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Datasheet Specifications

Part number: HGTG20N120
Manufacturer: Intersil Corporation
File Size: 167.55 KB
Datasheet: HGTG20N120_IntersilCorporation.pdf
Description: N-Channel IGBT

Features

* 34A, 1200V
* Latch Free Operation
* Typical Fall Time - 780ns
* High Input Impedance

Applications

* operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. PACKAGING AVAILABILITY PART NUMBER HGTG20N120E2 PACKAGE TO-247 BRAND G20N120

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HGTG20N120 N-Channel IGBT Intersil Corporation

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