Datasheet Specifications
- Part number
- HGTG20N60B3D
- Manufacturer
- Fairchild Semiconductor
- File Size
- 179.53 KB
- Datasheet
- HGTG20N60B3D_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high vo.
Features
* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. TheHGTG20N60B3D Distributors
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