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HGTG12N60A4D N-Channel IGBT

HGTG12N60A4D Description

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS The HGTG12N60A4D, HGTP12N60A4D and HGT1.

HGTG12N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335.

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N-Channel IGBT ON Semiconductor
ON Semiconductor HGTG12N60A4D-like datasheet