HGTG18N120BND IGBT

ON Semiconductor

HGTG18N120BND Description

IGBT - NPT 1200 V HGTG18N120BND .
HGTG18N120BND is based on Non. Punch Through (NPT) IGBT designs.

HGTG18N120BND Features

* 26 A, 1200 V, TC = 110°C
* Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
* Typical Fall Time
* . . . 140 ns at TJ = 150°C
* Short Circuit Rating
* Low Conduction Loss
* This Device is Pb
* Free www. onsemi. com C G E E C

📥 Download Datasheet

HGTG18N120BND Datasheet Preview — Preview of HGTG18N120BND PDF

Datasheet Details

Part number: HGTG18N120BND
Manufacturer: ON Semiconductor ↗
File Size: 426.40 KB
Datasheet: HGTG18N120BND-ONSemiconductor.pdf
Description: IGBT

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