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HGTG18N120BND IGBT

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Description

IGBT - NPT 1200 V HGTG18N120BND .
HGTG18N120BND is based on Non. Punch Through (NPT) IGBT designs.

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Features

* 26 A, 1200 V, TC = 110°C
* Low Saturation Voltage: VCE(sat) = 2.45 V @ IC = 18 A
* Typical Fall Time
* . . . 140 ns at TJ = 150°C
* Short Circuit Rating
* Low Conduction Loss
* This Device is Pb
* Free www. onsemi. com C G E E C

HGTG18N120BND Distributors

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