Datasheet Specifications
- Part number
- HGTG10N120BND
- Manufacturer
- Fairchild Semiconductor
- File Size
- 110.93 KB
- Datasheet
- HGTG10N120BND_FairchildSemiconductor.pdf
- Description
- N-Channel IGBT
Description
HGTG10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thro.
Features
* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA49290. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appliHGTG10N120BND Distributors
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