Datasheet Specifications
- Part number
- HGTG12N60B3D
- Manufacturer
- Intersil Corporation
- File Size
- 117.61 KB
- Datasheet
- HGTG12N60B3D_IntersilCorporation.pdf
- Description
- N-Channel IGBT
Description
HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3DS Data Sheet January 2000 File Number 4411.2 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperf.
Features
* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode usedHGTG12N60B3D Distributors
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