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FDMS6681Z P-Channel MOSFET

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Description

FDMS6681Z MOSFET  * POWERTRENCH), P-Channel -30 V, -122 A, 3.2 mW General .
The FDMS6681Z has been designed to minimize losses in load switch applications.

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Features

* Max rDS(on) = 3.2 mW at VGS =
* 10 V, ID =
* 21.1 A
* Max rDS(on) = 5.0 mW at VGS =
* 4.5 V, ID =
* 15.7 A
* Advanced Package and Silicon Combination for Low rDS(on)
* HBM ESD Protection Level of 8 kV Typical (Note 3)
* MSL1 Robus

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