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FDME510PZT - P-Channel MOSFET

Description

switching in cellular handset and other ultraportable applications.

Features

  • a MOSFET with low on.
  • state resistance. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel POWERTRENCH) -20 V, -6 A, 37 mW FDME510PZT General Description This device is designed specifically for battery charging or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on−state resistance. The MicroFETt 1.6x1.6 Thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Features • Max rDS(on) = 37 mW at VGS = −4.5 V, ID = −5 A • Max rDS(on) = 50 mW at VGS = −2.5 V, ID = −4 A • Max rDS(on) = 65 mW at VGS = −1.8 V, ID = −3 A • Max rDS(on) = 100 mW at VGS = −1.5 V, ID = −2 A • Low Profile: 0.55 mm Maximum in the New Package MicroFET 1.6x1.
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