PESD5V0S2UQ - (PESDxS2UQ) Double Esd Protection Diode

NXP

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Datasheet Details

Part number	PESD5V0S2UQ
Manufacturer	NXP
File Size	148.74 KB
Description	(PESDxS2UQ) Double Esd Protection Diode
Datasheet	PESD5V0S2UQ_PhilipsSemiconductors.pdf

PESD5V0S2UQ Product details

Description

Uni-directional double ESD protection diodes in a SOT663 plastic package. = p : made in Hong Kong. = t : made in Malaysia. = W : made in China. E1 E2 E3 E4 E5 1 PESDxS2UQ series QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse stand-off voltage di

Features

Uni-directional ESD protection of up to two lines.
Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs.
Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A.
Low reverse leakage current: IRM < 1 nA.
ESD protection > 30 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.

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Published: Jun 20, 2007 |