PESD5V0S1BA - Low capacitance bidirectional ESD protection diodes

NXP

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Datasheet Details

Part number	PESD5V0S1BA
Manufacturer	NXP
File Size	117.71 KB
Description	Low capacitance bidirectional ESD protection diodes
Datasheet	PESD5V0S1BA_PhilipsSemiconductors.pdf

PESD5V0S1BA Product details

Description

Top view 1 2 PESD5V0S1BA QUICK REFERENCE DATA SYMBOL VRWM Cd PARAMETER reverse standoff voltage diode capacitance; f = 1 MHz; VR = 0 V VALUE 5 35 UNIT V pF number of protected lines 1 PINNING PIN 1 2 anode 1 anode 2 DESCRIPTION 1 2 001aaa138 Low capacitance ESD protection diode in a very small SOD323 plastic package, designed to protect one data line from ElectroStatic Discharge (ESD) damage.The marking bar indicates pin 1 (cathodes are connected internally).MARKING TYPE NUMBER PESD5V0S

Features

Bi-directional ESD protection of one line.
Low diode capacitance.
Max. peak pulse power: Ppp = 130 W at tP = 8/20 µs.
Low clamping voltage: V(CL)R = 14 V at Ipp = 12 A.
Ultra low leakage current: IRM = 5 nA at VRWM = 5 V.
ESD protection 30 kV.
IEC 61000-4-2; level 4 (ESD).
IEC-61000-4-5 (surge); Ipp = 12 A at tP = 8/20 µs.

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Published: Feb 26, 2007 |