PESD5V0S2UAT - Double ESD protection diodes in SOT23 package

Name: PESD5V0S2UAT
SKU: PESD5V0S2UAT-39626

NXP

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Datasheet Details

Part number	PESD5V0S2UAT
Manufacturer	NXP
File Size	122.38 KB
Description	Double ESD protection diodes in SOT23 package
Datasheet	PESD5V0S2UAT_PhilipsSemiconductors.pdf

PESD5V0S2UAT Product details

Description

Unidirectional double ESD protection diodes in common cathode configuration in the SOT23 plastic package. = p : made in Hong Kong. = t : made in Malaysia. = W : made in China. 7A 7B 7C 7D 7E 1 PESDxS2UAT series QUICK R

Features

Unidirectional ESD protection of up to two lines.
Common-cathode configuration.
Max. peak pulse power: Ppp = 330 W at tp = 8/20 µs.
Low clamping voltage: V(CL)R = 20 V at Ipp = 18 A.
Ultra-low reverse leakage current: IRM < 700 nA.
ESD protection > 30 kV.
IEC 61000-4-2; level 4 (ESD).
IEC 61000-4-5 (surge); Ipp = 18 A at tp = 8/20 µs.

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Published: Mar 22, 2005 |