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BLT92 - UHF power transistor

Description

NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band.

This device has been designed specifically for class-B operation.

Features

  • internal input matching capacitor for a high power gain.
  • gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base.

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Datasheet Details

Part number BLT92
Manufacturer NXP Semiconductors
File Size 56.67 KB
Description UHF power transistor
Datasheet download datasheet BLT92 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLT92/SL UHF power transistor Product specification May 1989 Philips Semiconductors Product specification UHF power transistor DESCRIPTION NPN silicon planar epitaxial transistor primarily intended for use in handheld radio stations in the 900 MHz communications band. This device has been designed specifically for class-B operation. PIN CONFIGURATION FEATURES • internal input matching capacitor for a high power gain • gold metallization ensures excellent reliability The transistor has a 4-lead studless envelope with a ceramic cap (SOT122D). All leads are isolated from the mounting base. PINNING 1 = collector 2 = emitter 3 = base 4 = emitter Fig.1 Simplified outline, SOT122D.
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