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BLT52 - UHF power transistor

Description

DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package.

Fig.1 Simplified outline SOT409A.

QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit.

Features

  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLT52 UHF power transistor Product specification Supersedes data of 1997 Oct 15 1998 Jan 28 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Common emitter class-B operation in portable radio transmitters in the 470 MHz communication band. handbook, halfpage BLT52 PINNING PIN 1, 4, 5, 8 2, 3 6, 7 emitter base collector DESCRIPTION 8 5 DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a ceramic SOT409A SMD package. 1 Top view 4 MBK150 Fig.1 Simplified outline SOT409A. QUICK REFERENCE DATA RF performance at Tmb ≤ 60 °C in a common emitter test circuit.
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