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BLT61 - UHF power transistor

Description

NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package.

Fig.1 Simplified outline (SOT96-1; SO8).

Features

  • High efficiency.
  • High gain.
  • Internal pre-matched input.
  • Low supply voltage.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor FEATURES • High efficiency • High gain • Internal pre-matched input • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for 900 MHz communication systems. DESCRIPTION NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1(SO8) package. k, halfpage BLT61 PINNING PIN 1, 8 2, 4, 5, 7 3, 6 base emitter collector DESCRIPTION 8 5 1 Top view 4 MBK187 Fig.1 Simplified outline (SOT96-1; SO8). QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit.
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