Click to expand full text
DISCRETE SEMICONDUCTORS
DATA SHEET
BLT50 UHF power transistor
Product specification April 1991
Philips Semiconductors
Product specification
UHF power transistor
FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a SOT223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 MHz communications band. PINNING - SOT223
BLT50
QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter class-B test circuit (note 1). MODE OF OPERATION c.w. narrow band Note 1. Ts = temperature at soldering point of collector tab. PIN CONFIGURATION
age
f (MHz) VCE (V) 470 7.5
PL (W) 1.
BLT50 Datasheet
