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BLT53 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap.

It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band.

All leads are isolated from the mounting flange.

Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Withstands full load mismatch.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT53 UHF power transistor Product specification May 1991 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability • Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT122D studless envelope with a ceramic cap. It is designed for common emitter, class-B operation in portable radio transmitters in the 470 MHz communications band. All leads are isolated from the mounting flange.
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