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BLT70 - UHF power transistor

Description

NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package.

PINNING - SOT223H PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol.

Features

  • Very high efficiency.
  • Low supply voltage. handbook, halfpage BLT70.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLT70 UHF power transistor Product specification 1996 Feb 06 Philips Semiconductors Product specification UHF power transistor FEATURES • Very high efficiency • Low supply voltage. handbook, halfpage BLT70 APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation in the 900 MHz communication band. 4 c b DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic SOT223H SMD package. PINNING - SOT223H PIN 1 2 3 4 SYMBOL e b e c base emitter collector Fig.1 Simplified outline and symbol. DESCRIPTION emitter e 1 Top view 2 3 MAM043 - 1 QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Fig.7). MODE OF OPERATION CW, class-AB f (MHz) 900 VCE (V) 4.
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