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BLT71 - UHF power transistor

Description

NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8) plastic SMD package.

Fig.1 Simplified outline.

Features

  • High efficiency.
  • Very high gain.
  • Internal pre-matched input.
  • Low supply voltage.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor FEATURES • High efficiency • Very high gain • Internal pre-matched input • Low supply voltage. APPLICATIONS • Hand-held radio equipment in common emitter class-AB operation for the 900 MHz communication band. DESCRIPTION 1 4 MBK187 BLT71/8 PINNING - SOT96-1 PIN 1, 8 2, 4, 5, 7 3, 6 SYMBOL b e c base emitter collector DESCRIPTION handbook, halfpage 8 5 NPN silicon planar epitaxial power transistor encapsulated in a SOT96-1 (SO8) plastic SMD package. Top view Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit.
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