NESG210833 NPN SiGe RF TRANSISTOR

NEC

Description

DATA SHEET www.DataSheet4U.com NPN SILICON GERMANIUM RF TRANSISTOR NESG210833 NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFI.

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Datasheet Specifications

Part number: NESG210833
Manufacturer: NEC
File Size: 121.28 KB
Datasheet: NESG210833_NEC.pdf
Description: NPN SiGe RF TRANSISTOR

Features

* The device is an ideal choice for low noise, low distortion amplification. NF = 0.7 dB TYP. @ VCE = 5 V, IC = 5 mA, f = 1 GHz NF = 0.9 dB TYP. @ VCE = 5 V, IC = 30 mA, f = 1 GHz
* PO (1 dB) = 18.5 dBm TYP. @ VCE = 5 V, IC (set) = 30 mA, f = 1 GHz
* OIP3 = 31 dBm TYP. @ VCE

NESG210833 Distributors

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NESG210833 NPN SiGe TRANSISTOR NEC

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