NESG2031M05 NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

Description

www.DataSheet4U.com NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2031M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

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Datasheet Specifications

Part number: NESG2031M05
Manufacturer: CEL
File Size: 183.30 KB
Datasheet: NESG2031M05_CEL.pdf
Description: NPN SiGe HIGH FREQUENCY TRANSISTOR

Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for bett

Applications

* including low noise ampliﬁers, medium power ampliﬁers, and oscillators. NEC s low proﬁle, ﬂat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS NF Ga NF Ga RF MSG |S21E| P1dB OIP3 fT Cr

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NESG2031M05 NPN SiGe HIGH FREQUENCY TRANSISTOR CEL

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