NESG2021M05 NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

Description

www.DataSheet4U.com DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2021M05 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

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Datasheet Specifications

Part number: NESG2021M05
Manufacturer: CEL
File Size: 755.40 KB
Datasheet: NESG2021M05_CEL.pdf
Description: NPN SiGe HIGH FREQUENCY TRANSISTOR

Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better

Applications

* including low noise ampliﬁers, medium power ampliﬁers, and oscillators. NECʼs low proﬁle, ﬂat lead style M05 Package provides high frequency performance for compact wireless designs. NESG2021M05 M05 UNITS dB dB dB dB dB dB dBm dBm GHz pF nA nA 130 190 20 15.0 20.0 17.0 MIN TYP 1.3 10.0 0.9 18.0 22.5

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NESG2021M05 NPN SiGe HIGH FREQUENCY TRANSISTOR CEL

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