NESG2021M16 HIGH FREQUENCY TRANSISTOR

CEL

Description

PRELIMINARY DATA SHEET NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR NESG2021M16 .
NEC's NESG2021M16 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

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Datasheet Specifications

Part number: NESG2021M16
Manufacturer: CEL
File Size: 79.55 KB
Datasheet: NESG2021M16-CEL.pdf
Description: HIGH FREQUENCY TRANSISTOR

Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)
* LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz
* HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz

Applications

* including low noise ampliﬁers, medium power ampliﬁers, and oscillators. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE NESG2021M16 M16 DC RF SYMBOLS NF Ga NF Ga MSG |S21E|2 P1dB OIP3 fT Cre ICBO IEBO hFE PARAMETERS AND CONDITIONS UNITS Noise Figure at VCE = 2 V, IC = 3 mA,

NESG2021M16 Distributors

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NESG2021M16 HIGH FREQUENCY TRANSISTOR CEL

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