Datasheet Details
- Part number
- NESG2101M05
- Manufacturer
- NEC
- File Size
- 172.23 KB
- Datasheet
- NESG2101M05_NEC.pdf
- Description
- NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
NESG2101M05 Description
NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2101M05 is fabricated using NEC s high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.
NESG2101M05 Features
* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dBm at 2 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M05 PACKAGE: SOT-343 footprint, wi
NESG2101M05 Applications
* including low noise amplifiers, medium power amplifiers, and oscillators NEC s low profile, flat lead style M05 Package provides high frequency performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga RF NF Ga MSG |S21E| fT Cre I
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