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NESG2101M16 - NPN SiGe HIGH FREQUENCY TRANSISTOR

NESG2101M16 Description

www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

NESG2101M16 Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minim

NESG2101M16 Applications

* including low noise amplifiers, medium power amplifiers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MI

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Datasheet Details

Part number
NESG2101M16
Manufacturer
CEL
File Size
253.61 KB
Datasheet
NESG2101M16_CEL.pdf
Description
NPN SiGe HIGH FREQUENCY TRANSISTOR

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NPN SiGe HIGH FREQUENCY TRANSISTOR CEL
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