NESG2101M16 NPN SiGe HIGH FREQUENCY TRANSISTOR

CEL

Description

www.DataSheet4U.com PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2101M16 HIGH FREQUENCY TRANSISTOR .
NEC's NESG2101M16 is fabricated using NECʼs high voltage Silicon Germanium process (UHS2-HV), and is designed for a wide range of applications includi.

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Datasheet Specifications

Part number: NESG2101M16
Manufacturer: CEL
File Size: 253.61 KB
Datasheet: NESG2101M16_CEL.pdf
Description: NPN SiGe HIGH FREQUENCY TRANSISTOR

Features

* HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 0.6 dB at 1 GHz HIGH MAXIMUM STABLE POWER GAIN: MSG = 17 dB at 2 GHz LOW PROFILE M16 PACKAGE: 6-pin lead-less minim

Applications

* including low noise ampliﬁers, medium power ampliﬁers, and oscillators ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS P1dB GL NF Ga NF Ga MSG |S21E| fT Cre ICBO DC IEBO hFE Notes: 2 NESG2101M16 M16 UNITS dBm dB dB dB dB dB dB dB GHz pF nA nA 130 190 14.5 11.5 14 11.0 MI

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NESG2101M16 NPN SiGe HIGH FREQUENCY TRANSISTOR CEL

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