MRFG35010MT1 Datasheet (Motorola) - RF Power Field Effect Transistor

MRFG35010MT1, RF Power Field Effect Transistor

7.5 pF Chip Capacitors, B Case, ATC 0.4 pF Chip Capacitors (0805), AVX 0.2 pF Chip Capacitors (0805), AVX 3.9 pF Chip Capacitors, AVX 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 0.1 µF Chip Capacitors

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc.

Order this document by MRFG35010MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz.

Device is unmatched and is suitable for use in Class AB linear base station applications.

Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW

MRFG35010MT1 Features

* 5 0.614 0.613 0.613 0.614 0.614 S21 ∠φ 23.27 22.02 20.80 19.56 18.28 16.96 15.64 14.29 13.00 11.67 10.3