MRFG35003MT1 Datasheet (Motorola) - RF Power Field Effect Transistor

MRFG35003MT1, RF Power Field Effect Transistor

7.5 pF Chip Capacitors, B Case 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors, A Case 100 pF Chip Capacitors, A Case 100 pF Chip Capacitors, B Case 1000 pF Chip Capacitors, B Case 3.9 µF Chip Capacitors, B Case 0.1 µF Chip Capacitors, B Case 22 µF, 35 V Tantalum Surface Mount Capacitors 0.7 pF

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003MT1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz.

Device is unmatched and is suitable for use in Class AB linear base station applications.

Typical W CDMA Performance: 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset

MRFG35003MT1 Features

* .10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 S11 |S11| 0.868 0.866 0.866 0.868 0.865 0.864 0.865 0.864 0.861 0.863 0.862 0.860 0.862 0.861 0.860 0.862