MRFG35003M6T1 Datasheet (Motorola) - RF Power Field Effect Transistor

MRFG35003M6T1, RF Power Field Effect Transistor

12 pF Chip Capacitor, B Case, ATC 0.1 pF Chip Capacitor (0805), AVX 3.9 pF Chip Capacitors (0805), AVX 10 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, A Case, ATC 100 pF Chip Capacitors, B Case, ATC 1000 pF Chip Capacitors, B Case, ATC 3.9 µF Chip Capacitors, B Case, ATC 0.1 µF Chip Capac

www.DataSheet4U.com MOTOROLA Freescale Semiconductor, Inc.

SEMICONDUCTOR TECHNICAL DATA Order this document by MRFG35003M6T1/D The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications.

Characterized from 0.5 to 5.0 GHz.

Device is unmatched and is characterized for use in Class AB Customer Premise Equipment (CPE) applications.

Typical W CDMA Performance: 42 dBc ACPR, 3.55 GHz, 6 Volts, IDQ = 18

MRFG35003M6T1 Features

* 70 0.570 0.571 0.573 S21 ∠φ 34.63 33.54 32.46 31.37 30.25 29.09 27.89 26.69 25.53 24.33 23.09 21.89 20.67 19.44 18.26 17.08 15.88 14.68 13.50 12.39 11.29 10.20 9.15 8.10 7.10