MRFG35002N6AT1 Datasheet (Freescale Semiconductor) - Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35002N6AT1, Gallium Arsenide PHEMT RF Power Field Effect Transistor

13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 R1 C5 C6 C18 C17 C16 C14 www.DataSheet4U.com C15 C19 C20 C22 C21 C1 C2 C3 C4 C23 C24 MRFG35002N6A Rev.

3 Figure 2.

MRFG35002N6A Te

Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev.

1, 12/2008 www.DataSheet4U.com Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications.

Characterized from 500 to 5000 MHz.

Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.

Typical Single - Carrier W - CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84

MRFG35002N6AT1 Features

* Excellent Phase Linearity and Group Delay Characteristics

* High Gain, High Efficiency and High Linearity

* RoHS Compliant

* In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, ST