MRFG35002N6AT1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor

The MRFG35002N6AT1 by Freescale Semiconductor is a Gallium Arsenide PHEMT RF Power Field Effect Transistor. Below is the official datasheet preview.

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MRFG35002N6AT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRFG35002N6AT1** Gallium Arsenide PHEMT RF Power Field Effect Transistor datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRFG35002N6AT1
Manufacturer	Freescale Semiconductor
File Size	214.84 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35002N6AT1_FreescaleSemiconductor.pdf
Additional preview pages of the MRFG35002N6AT1 datasheet.

MRFG35002N6AT1 Product details

Description

13 pF Chip Capacitors Part Number ATC100A130JT500XT Manufacturer ATC MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C13 C12 C11 C10 C9 C8 C7 R1 C5 C6 C18 C17 C16 C14 www.DataSheet4U.com C15 C19 C20 C22 C21 C1 C2 C3 C4 C23 C24 MRFG35002N6A Rev.3 Figure 2. MRFG35002N6A Test Circuit Component Layout MRFG35002N6AT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS www.DataSheet4U.com 14 12 Gps, POWER GAIN (dB) 10 Gps 8 6 4 2 14 16 18 20 22 24 26 28 Pout

Features

Excellent Phase Linearity and Group Delay Characteristics.
High Gain, High Efficiency and High Linearity.
RoHS Compliant.
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35002N6AT1 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5.

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Published: Mar 20, 2010 |