MRFG35005MT1 Datasheet (Freescale Semiconductor) - Gallium Arsenide PHEMT RF Power Field Effect Transistor

MRFG35005MT1, Gallium Arsenide PHEMT RF Power Field Effect Transistor

7.5 pF Chip Capacitors 0.4 pF Chip Capacitor (0805) 3.9 pF Chip Capacitors (0805) 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 3.9 µF Chip Capacitors 0.1 µF Chip Capacitors 22 µF, 35 V Tantalum Surface Mount Capacitors 0.1 pF Chip Capacitors (0805) 0.3

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev.

2, 5/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz.

Device is unmatched and is suitable for use in Class AB linear base station applications.

Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 80 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability)

MRFG35005MT1 Features

* 99 96.91 95.41 94.29 92.80 91.10 89.66 87.90 86.08 84.39 82.48 80.32 |S21| 1.522 1.507 1.493 1.478 1.465 1.453 1.436 1.421 1.409 1.3