MRFG35010AR1 - Gallium Arsenide PHEMT RF Power Field Effect Transistor

Freescale Semiconductor

The MRFG35010AR1 by Freescale Semiconductor is a Gallium Arsenide PHEMT RF Power Field Effect Transistor. Below is the official datasheet preview.

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MRFG35010AR1 Gallium Arsenide PHEMT RF Power Field Effect Transistor by Freescale Semiconductor - Datasheet Preview — Official preview page of the **MRFG35010AR1** Gallium Arsenide PHEMT RF Power Field Effect Transistor datasheet (Freescale Semiconductor).

Datasheet Details

Part number	MRFG35010AR1
Manufacturer	Freescale Semiconductor
File Size	445.79 KB
Description	Gallium Arsenide PHEMT RF Power Field Effect Transistor
Datasheet	MRFG35010AR1_FreescaleSemiconductor.pdf
Additional preview pages of the MRFG35010AR1 datasheet.

MRFG35010AR1 Product details

Description

6.8 pF Chip Capacitors 10 pF Chip Capacitors 100 pF Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 0.1 μF Chip Capacitors 39K Chip Capacitors 10 μF, 50 V Chip Capacitors 50 Ω Chip Resistors Part Number 100A6R81BW150XT 100A100JW150XT 100A101JW150XT 100B101JW500XT 100B102JW500XT 200B104KW50XT 200B393KW50XT GRM55DR61H106KA88B P51ETR - ND Manufacturer ATC ATC ATC ATC ATC ATC ATC Murata Newark MRFG35010AR1 RF Device Data Freescale Semiconductor 3 C8 C9 R2 C7 C6 C5 C4 C3 C2 C16 R1

Features

VDD = 12 Vdc, IDQ = 1000 mA, TC = 25°C, 50 ohm system) (continued) f GHz 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75.

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Published: Dec 4, 2006 |