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IRGP4790PBF Insulated Gate Bipolar Transistor

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Description

  VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 75A Applications * Industrial Motor Drive * UPS

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Datasheet Specifications

Part number
IRGP4790PBF
Manufacturer
International Rectifier
File Size
772.45 KB
Datasheet
IRGP4790PBF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor     C  G E n-channel G Gate E GC IRGP4790PbF  TO‐247AC  C Col

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4790PBF Distributors

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