IRGP4790D-EPbF, IRGP4790DPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs.

📥 Download Datasheet

IRGP4790D-EPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGP4790D-EPbF, IRGP4790DPbF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRGP4790D-EPbF, IRGP4790DPbF
Manufacturer: International Rectifier
File Size: 868.87 KB
Datasheet: IRGP4790DPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: IRGP4790D-EPbF, IRGP4790DPbF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP4790D‐EPbF TO‐247AD E Emitter Benefits High Effici

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4790D-EPbF Distributors

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IRGP4790DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4790D-EPbF-like datasheet