IRGP4750D-EPbF, IRGP4750DPbF Insulated Gate Bipolar Transistor

International Rectifier

Description

IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 35A Applications * Industr.

📥 Download Datasheet

IRGP4750D-EPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGP4750D-EPbF, IRGP4750DPbF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRGP4750D-EPbF, IRGP4750DPbF
Manufacturer: International Rectifier
File Size: 652.44 KB
Datasheet: IRGP4750DPbF-InternationalRectifier.pdf
Description: Insulated Gate Bipolar Transistor
Note: This datasheet PDF includes multiple part numbers: IRGP4750D-EPbF, IRGP4750DPbF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247AC

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4750D-EPbF Distributors

📁 Related Datasheet

IRGP4050 IRGP420U IRGP430U IRGP430UD2 IRGP440U IRGP440UD2

📌 All Tags

IRGP4750DPbF Insulated Gate Bipolar Transistor International Rectifier

International Rectifier IRGP4750D-EPbF-like datasheet