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IRGP4760D-EPbF, IRGP4760DPbF Insulated Gate Bipolar Transistor

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Description

  VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 48A Applications * Industrial Motor Drive * .

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This datasheet PDF includes multiple part numbers: IRGP4760D-EPbF, IRGP4760DPbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP4760D-EPbF, IRGP4760DPbF
Manufacturer
International Rectifier
File Size
914.13 KB
Datasheet
IRGP4760DPbF-InternationalRectifier.pdf
Description
Insulated Gate Bipolar Transistor
Note
This datasheet PDF includes multiple part numbers: IRGP4760D-EPbF, IRGP4760DPbF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGP4760DPbF IRGP4760D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  G E n-channel G Gate E

Applications

* Industrial Motor Drive
* UPS
* Solar Inverters

IRGP4760D-EPbF Distributors

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