Datasheet Specifications
- Part number
- IRGP4750DPbF
- Manufacturer
- International Rectifier
- File Size
- 652.44 KB
- Datasheet
- IRGP4750DPbF-InternationalRectifier.pdf
- Description
- Insulated Gate Bipolar Transistor
Description
IRGP4750DPbF IRGP4750D-EPbF VCES = 650V IC = 50A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 35A Applications * Industr.
Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C G E n-channel G Gate E GC IRGP4750DPbF TO‐247ACApplications
* Industrial Motor DriveIRGP4750DPbF Distributors
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