Datasheet Specifications
- Part number
- IRGP4790DPbF
- Manufacturer
- International Rectifier
- File Size
- 868.87 KB
- Datasheet
- IRGP4790DPbF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRGP4790DPbF IRGP4790D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5µs.
Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant G E n-channel G Gate E GC IRGP4790DPbF TO‐247AC C Collector E GC IRGP4790D‐EPbF TO‐247AD E Emitter Benefits High EfficiApplications
* Industrial Motor DriveIRGP4790DPbF Distributors
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