Datasheet Specifications
- Part number
- IRGP4266DPbF
- Manufacturer
- International Rectifier
- File Size
- 874.09 KB
- Datasheet
- IRGP4266DPbF-InternationalRectifier.pdf
- Description
- INSULATED GATE BIPOLAR TRANSISTOR
Description
IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5.
Features
* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of ApApplications
* Industrial Motor DriveIRGP4266DPbF Distributors
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