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IRGP4262DPBF, IRGP4262D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

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Description

IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 40A, TC =100°C tSC 5.5µs, TJ(max) .

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This datasheet PDF includes multiple part numbers: IRGP4262DPBF, IRGP4262D-EPBF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRGP4262DPBF, IRGP4262D-EPBF
Manufacturer
International Rectifier
File Size
690.16 KB
Datasheet
IRGP4262D-EPBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4262DPBF, IRGP4262D-EPBF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Base part number IRGP4262DPBF IRGP4262D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°

Applications

* Industrial Motor Drive

IRGP4262DPBF Distributors

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International Rectifier IRGP4262DPBF-like datasheet