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IRGP4266-EPBF INSULATED GATE BIPOLAR TRANSISTOR

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Description

IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC = 75.

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Datasheet Specifications

Part number
IRGP4266-EPBF
Manufacturer
International Rectifier
File Size
910.45 KB
Datasheet
IRGP4266-EPBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR

Features

* Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5.5µs short circuit SOA Lead-Free, RoHS compliant Base part number IRGP4266PbF IRGP4266-EPbF Package Type TO-247AC TO-247AD  Benefits High efficiency in a wide range of

Applications

* Industrial Motor Drive
* Inverters
* UPS

IRGP4266-EPBF Distributors

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