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IRGP4266D-EPbF, IRGP4266DPbF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4266D-EPbF Description

  IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  C   tSC 5.5.

IRGP4266D-EPbF Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF  TO‐247AC  C Collector E GC IRGP4266D‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Ap

IRGP4266D-EPbF Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRGP4266D-EPbF, IRGP4266DPbF
Manufacturer
International Rectifier
File Size
874.09 KB
Datasheet
IRGP4266DPbF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4266D-EPbF-like datasheet