IRGP4266D-EPbF, IRGP4266DPbF INSULATED GATE BIPOLAR TRANSISTOR

International Rectifier

Description

IRGP4266DPbF IRGP4266D-EPbF VCES = 650V IC = 90A, TC =100°C Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C tSC 5.5.

📥 Download Datasheet

IRGP4266D-EPbF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IRGP4266D-EPbF, IRGP4266DPbF
Manufacturer: International Rectifier
File Size: 874.09 KB
Datasheet: IRGP4266DPbF-InternationalRectifier.pdf
Description: INSULATED GATE BIPOLAR TRANSISTOR
Note: This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF.
Please refer to the document for exact specifications by model.

Features

* Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of Ap

Applications

*  Industrial Motor Drive
*  UPS
*  Solar Inverters

IRGP4266D-EPbF Distributors

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IRGP4266DPbF INSULATED GATE BIPOLAR TRANSISTOR International Rectifier

International Rectifier IRGP4266D-EPbF-like datasheet