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IRGP4263PBF, IRGP4263-EPBF INSULATED GATE BIPOLAR TRANSISTOR

IRGP4263PBF Description

  IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ.= 1.7V @ IC =.

IRGP4263PBF Features

* Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE (ON) temperature coefficient 5.5µs short circuit SOA Lead-free, RoHS compliant Base part number IRG7P4263PbF IRG7P4263-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM

IRGP4263PBF Applications

* Industrial Motor Drive
* Inverters
* UPS

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: IRGP4263PBF, IRGP4263-EPBF. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IRGP4263PBF, IRGP4263-EPBF
Manufacturer
International Rectifier
File Size
887.41 KB
Datasheet
IRGP4263-EPBF-InternationalRectifier.pdf
Description
INSULATED GATE BIPOLAR TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: IRGP4263PBF, IRGP4263-EPBF.
Please refer to the document for exact specifications by model.

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📌 All Tags

INSULATED GATE BIPOLAR TRANSISTOR International Rectifier
International Rectifier IRGP4263PBF-like datasheet