PXAC182908FV - Thermally-Enhanced High Power RF LDMOS FET

Name: PXAC182908FV
SKU: PXAC182908FV-964327

Infineon

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Datasheet Details

Part number	PXAC182908FV
Manufacturer	Infineon
File Size	318.55 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC182908FV-Infineon.pdf

PXAC182908FV Product details

Description

The PXAC182908FV is a 240-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182908FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 600 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 Gain 12 0 8 PAR @ 0.01% CCD.

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Published: Feb 3, 2016 |