PXAC180602MD - Thermally-Enhanced High Power RF LDMOS FET

Name: PXAC180602MD
SKU: PXAC180602MD-961156

Infineon

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Datasheet Details

Part number	PXAC180602MD
Manufacturer	Infineon
File Size	393.19 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC180602MD-Infineon.pdf

PXAC180602MD Product details

Description

The PXAC180602MD is a 60-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include dual-path design, input matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC180602MD Package PG-HB1DSO-4-1 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 80 mA, ƒ = 1880 MHz 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 75 50 16 Gain 25 12 0 8 PAR @ 0.01% CCDF 4 -2.

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Published: Jan 26, 2016 |