PXAC182002FC - Thermally-Enhanced High Power RF LDMOS FET

Name: PXAC182002FC
SKU: PXAC182002FC-961157

Infineon

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Datasheet Details

Part number	PXAC182002FC
Manufacturer	Infineon
File Size	330.14 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PXAC182002FC-Infineon.pdf

PXAC182002FC Product details

Description

The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band.

Features

include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 Efficiency 20 60 40 16 20 Gain 12 0 8 PAR @ 0.01% CCDF.

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Published: Jan 26, 2016 |