PTVA120251EA - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA120251EA
Manufacturer	Infineon ↗
File Size	635.41 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA120251EA-Infineon.pdf

The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band.

include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120251EA Package H-36265-2 Output Power (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C 300 µs pulse width, 12% duty cycle 60 Efficiency 55 70 60 50 45 40 35 30 18 Output Power 50 40 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 20 140.

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Published: Feb 19, 2016 |