Datasheet4U Logo Datasheet4U.com

PTVA127002EV - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA127002EV Package H-36275-4 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 300 mA, TCASE = 25°C, 300 µs pulse width, 12% duty cycle 65 Output Power 55 65 55 45 45 35 35 25 1200 MHz 25 Efficiency 1300 MHz 15 1400 MHz a127002ev_g1-1 15 30 32 34 36 38 40 42.

📥 Download Datasheet

Datasheet preview – PTVA127002EV

Datasheet Details

Part number PTVA127002EV
Manufacturer Infineon
File Size 518.11 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA127002EV Datasheet
Additional preview pages of the PTVA127002EV datasheet.

📁 Similar Datasheet

  • PTVA120251EA - 25W High Power RF LDMOS FET (MACOM)
  • PTVA120252MT - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PTVA120501EA - 50W High Power RF LDMOS FET (MACOM)
  • PTVA082407NF - Thermally-Enhanced High Power RF LDMOS FET (MACOM)
  • PTVA082407NF - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PTVA084007NF - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PTVA092407NF - Thermally-Enhanced High Power RF LDMOS FET (Wolfspeed)
  • PTV03010 - DC-DC CONVERTERS (Artesyn)
  • PTV03010W - 3.3-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE (Texas Instruments)
  • PTV03020W - 3.3-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE (Texas Instruments)
Other Datasheets by Infineon

Full PDF Text Transcription

Click to expand full text
PTVA127002EV Thermally-Enhanced High Power RF LDMOS FET 700 W, 50 V, 1200 – 1400 MHz Description The PTVA127002EV LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Published: |