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PTVA101K02EV - Thermally-Enhanced High Power RF LDMOS FET

Datasheet Summary

Description

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C ƒ = 1030 MHz 26 128µs, 10% 22 128µs, 1% MODE-S 18 60 50 40 14 Gain 10 30 20 6 10 Efficiency 2 a101k02ev_1-1 0 30 35 40 45 50 55 60 65 Pout (dBm) Features.

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Datasheet Details

Part number PTVA101K02EV
Manufacturer Infineon
File Size 423.74 KB
Description Thermally-Enhanced High Power RF LDMOS FET
Datasheet download datasheet PTVA101K02EV Datasheet
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Full PDF Text Transcription

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PTVA101K02EV Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
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