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PTVA123501EC - Thermally-Enhanced High Power RF LDMOS FETs

Datasheet Summary

Description

The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band.

Features

  • include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTVA123501EC Package H-36248-2 PTVA123501FC Package H-37248-2 Power Sweep, Pulsed RF IDQ = 150 mA, VDD = 50 V, TCASE = 25°C, 300 µs pulse width, 12% duty cycle POUT (dBm) Drain Efficiency (%) 60 80 55 Output Power 50 70 60 45 50 40 35 30 30 Efficiency 32 34 36 1200 MHz 40 1.

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Datasheet Details

Part number PTVA123501EC
Manufacturer Infineon
File Size 611.19 KB
Description Thermally-Enhanced High Power RF LDMOS FETs
Datasheet download datasheet PTVA123501EC Datasheet
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Full PDF Text Transcription

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PTVA123501EC PTVA123501FC Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC and PTVA123501FC LDMOS FETs are designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with slotted and earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
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